具有线性张角结构和非线性张角结构的锥形激光放大器的分析
(2.中国科学院大学, 北京 100049)
【摘要】利用分步傅里叶算法求解锥形半导体激光放大器中的稳态行波方程,对线性张角结构和非线性张角结构波导形状的激光放大器进行光学和热学性质的数值模拟。通过比较两种结构的激光放大器的输入电流-输出功率曲线,输入功率-输出功率曲线和光丝形成数量,研究放大器中光丝的形成机理,解释两种激光放大器中不同光场分布的原因。结果表明,非线性张角结构的放大器不仅能使增益分布和光场分布更契合,而且能减小波导边缘反射光和入射光的耦合,所以有着更高的光光转换效率和更稳定的模式输出。
【关键词】 激光技术; 锥形激光放大器; 分步傅里叶算法; 光学和热学性质; 光场模式; 光丝;
【DOI】
-
References
[1] Sun S M,Fan J,Xu L,et al.Progress of tapered semiconductor diode lasers[J].Chinese Optics,2019,12(1):48-58.
[2] Zhou X Y,Zhao S Y,Ma X L,et al.Low vertical devergence angle and high brightness photonic crystal semiconductor laser[J].Chinese Journal of Lasers,2017,44(2):0201010.
[3] Walpole J N.Semiconductor amplifiers and lasers with tapered gain regions[J].Optical and Quantum Electronics,1996,28(6):623-645.
[4] Yao C,Xu T H,Wan W J,et al.Single-mode tapered terahertz quantum cascade lasers with lateral gratings[J].Solid-State Electronics,2016,122:52-55.
[5] Spreemann M,Lichtner M,Radziunas M,et al.Measurement and simulation of distributed-feedback tapered master-oscillator power amplifiers[J].IEEE Journal of Quantum Electronics,2009,45(6):609-616.
[6] Egan A,Ning C Z,Moloney J V,et al.Dynamic instabilities in master oscillator power amplifier semiconductor lasers[J].IEEE Journal of Quantum Electronics,1998,34(1):166-170.
[7] Pérez-Serrano A,Tijero J M G,Balle S,et al.Numerical analysis of the modulation dynamics in an integrated three-section MOPA using a voltage driven traveling-wave model[J].IEEE Journal of Selected Topics in Quantum Electronics,2019,25(6):3000110.
[8] Friedmann P,Gilly J,Schleife J,et al.High efficiency frequency stabilized tapered amplifiers with improved brightness[J].Proceedings of SPIE,2011,7918:79180B.
[9] Ji E C,Liu Q,Nie M M,et al.Theoretical and experimental analysis of high-power frequency-stabilized semiconductor master oscillator power-amplifier system[J].Applied Optics,2016,55(11):2909-2914.
[10] Radziunas M,Fuhrmann J,Zeghuzi A,et al.Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers[J].Optical and Quantum Electronics,2019,51(3):69.
[11] Ning C Z,Indik R A,Moloney J V.Effective Bloch equations for semiconductor lasers and amplifiers[J].IEEE Journal of Quantum Electronics,1997,33(9):1543-1550.
[12] Borruel L,Sujecki S,Moreno P,et al.Quasi-3-D simulation of high-brightness tapered lasers[J].IEEE Journal of Quantum Electronics,2004,40(5):463-472.
[13] Sujecki S,Borruel L,Wykes J,et al.Nonlinear properties of tapered laser cavities[J].IEEE Journal of Selected Topics in Quantum Electronics,2003,9(3):823-834.
[14] Li J,Qiu Y T,Cao Y H,et al.Numerical simulation of filamentation induced by waveguide in semiconductor taper amplifiers[J].Optik,2019,176:711-715.
[15] Li J,Qiu Y T,Cao Y H,et al.Numerical simulation and experiment of high brightness tapered lasers[J].Optik,2018,158:502-507.
[16] Du W C,Kang J J,Li Y,et al.Optimization of facet reflectivity of 450-nm GaN-based semiconductor lasers[J].Acta Optica Sinica,2019,39(6):0614002.
[17] Song J,Gao X,Yan H Y,et al.Thermal lens effect of high power semiconductor laser waveguide and its influence on beam divergence angle of slow axis[J].Chinese Journal of Lasers,2018,45(10):1005004.
[18] Skovgaard P M W,McInerney J G,Moloney J V,et al.Enhanced stability of MFA-MOPA semiconductor lasers using a nonlinear,trumpet-shaped flare[J].IEEE Photonics Technology Letters,1997,9(9):1220-1222.
[19] Kristjánsson S,Eriksson N,Modh P,et al.Grating-based surface-emitting tapered unstable resonator laser simulations and experiments[J].IEEE Journal of Quantum Electronics,2001,37(11):1441-1448.
[20] Lang R J,Hardy A,Parke R,et al.Numerical analysis of flared semiconductor laser amplifiers[J].IEEE Journal of Quantum Electronics,1993,29(6):2044-2051.
ISSN:0253-2239
CN: 31-1252/O4
Vol 40, No. 03, Pages 94-100
February 2020
Downloads:0